(1984) ‘Electronic energy levels of the icosahedron in rhombohedral a-boron’, Sov. B 38, 1392–6. The absorption edges, photoeffects related to gap states, IR-active lattice vibrations and plasma vibrations are discussed with respect to band structure models, band structure calculations, and structure conceptions. Create a free website or blog at WordPress.com. 249–59. Longuett-Higgins, H. C. and Roberts, M. de V. (1955) ‘The electronic structure of an icosahedron of boron atoms’, Proc. Chem. b, A fragment of the -rhombohedral boron structure. In contrast, the Raman spectra of the boron carbides reveal local substitutional … Sch8ttke, H. (1983) ‘The electronic band structure of a- rhombohedral boron’, J. constitutes 15 crystallographically independent atomic sites and these are fully occupied. Broad peaks presumably characteristic of highly delocalized three-center bonds were observed at the centers of the triangular faces of the B 12 icosahedron. Hexagonal boron nitride (hBN) is a promising material for a range of applications including deep-ultraviolet light emission. Rev. Cite as. pp 683-690 | Weyrich, K. H., Brey, L. and Christensen, N. E. (1988) ‘Full-potential linear-muffin-tin-orbital calculation of phonon frequencies in semiconductors’, Phys. The one-electron energy levels of icosahedral boron clusters have been calculated as a function of intericosahedral spacing maintaining the intraicosahedral spacing of α-boron. Li, D., Xu, Y-N. and Ching, W. Y. The α-rhombohedral boron is an insulator while B12As2 and B12P2 are semiconductors. They do not follow the general bonding rules we are taught in chemistry classes. IV. Version of Zones and Zigzag Structure in Icosahedral Fullerenes and Icosadeltahedra. Howard, I. (1971) Chemical Applications of Group Theory, WileyInterscience, New York. The carbon concentration of these materials ranges from 10% to 20% as defined by B12+x C3-x with 0.1